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NTR2101P Small Signal MOSFET
-8.0 V, -3.7 A, Single P-Channel, SOT-23
Features
* * * *
Leading Trench Technology for Low RDS(on) -1.8 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint (3 x 3 mm) Pb-Free Package is Available
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V(BR)DSS RDS(on) Typ 39 mW @ -4.5 V -8.0 V 52 mW @ -2.5 V 79 mW @ -1.8 V P-Channel D -3.7 A ID Max
Applications
* High Side Load Switch * DC-DC Conversion * Cell Phone, Notebook, PDAs, etc.
MAXIMUM RATINGS (TJ = 25C unless otherwise stated)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current t 10 s TA = 25C TA = 70C t 10 s tp = 10 ms PD IDM TJ, TSTG IS TL Symbol VDSS VGS ID Value -8.0 8.0 -3.7 -3.0 0.96 -11 -55 to 150 -1.2 260 W Unit V V A G
S 3 A C A C 1 2 SOT-23 CASE 318 STYLE 21
MARKING DIAGRAM & PIN ASSIGNMENT
Drain 3 TR7 M G G 1 Gate 2 Source
Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 from case for 10 s)
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient - Steady State Junction-to-Ambient - t 10 s Symbol RqJA RqJA Max 160 130 Unit C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
TR7 = Specific Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location.
ORDERING INFORMATION
Device NTR2101PT1 NTR2101PT1G Package SOT-23 SOT-23 (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2006
March, 2006 - Rev. 4
1
Publication Order Number: NTR2101P/D
NTR2101P
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise stated)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) VGS = -4.5 V, ID = -3.5 A VGS = -2.5 V, ID = -3.0 A VGS = -1.8 V, ID = -2.0 A Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = -1.2 A TJ = 25C -0.73 -1.2 V td(on) tr td(off) tf VGS = -4.5 V, VDD = -4.0 V, ID = -1.2 A, RG = 6.0 W 7.4 15.75 38 31 15 25 58 51 ns CISS COSS CRSS QG(TOT) QGS QGD VGS = -4.5 V, VDS = -4.0 V, ID = -3.5 A VGS = 0 V, f = 1.0 MHz, VDS = -4.0 V 1173 289 218 12 3.8 2.5 15 nC pF gFS VGS = -5.0 V, ID = -3.5 A VGS = 0 V, VDS = -6.4 V TJ = 25C TJ = 125C VGS = 0 V, ID = -250 mA -8.0 10 -1.0 -100 100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit
Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance
VDS = 0 V, VGS = 8.0 V VGS = VDS, ID = -250 mA -0.40 0.0027 39 52 79 9.0
-1.0
V mV/C
52 72 120
mW
S
2. Pulse Test: pulse width 300 ms, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.
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NTR2101P
10 -ID, DRAIN CURRENT (A) 8 6 4 2 0 0 1 2 3 4 5 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS = -2.6 V to -6.0 V VGS = -2.4 V VGS = -2.0 V VGS = -2.2 V TJ = 25C -ID, DRAIN CURRENT (A) 10 8 6 4 2 0 0 1 2 3 4 -VGS, GATE-TO-SOURCE VOLTAGE (V) TJ = -55C TJ = 150C TJ = 25C VDS -10 V
VGS = -1.8 V
VGS = -1.4 V VGS = -1.2 V
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.25 0.2 0.15 0.1 0.05 0 0 1 2 3 4 5 6 ID = -3.7 A TJ = 25C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.08
Figure 2. Transfer Characteristics
VGS = -4.5 V 0.06 TJ = 150C TJ = 25C TJ = -55C 0.02
0.04
0
2
3
4
5
6
7
8
-VGS, GATE-TO-SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 3. On-Resistance versus Gate-to-Source Voltage
1.7 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 -50 100 -25 0 25 50 75 100 125 150 0 ID = -3.7 A VGS = -4.5 V IDSS, LEAKAGE (nA) 10000 100000
Figure 4. On-Resistance versus Drain Current and Gate Voltage
VGS = 0 V TJ = 150C
1000 TJ = 100C
2
4
6
8
TJ, JUNCTION TEMPERATURE (C)
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current versus Voltage
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NTR2101P
2500 VDS = 0 C, CAPACITANCE (pF) 2000 1500 1000 500 0 -4 -2 -VGS -VDS 0 2 4 6 8 CRSS CISS VGS = 0 TJ = 25C
-VGS, GATE-TO-SOURCE VOLTAGE (V)
5
QT VDS
5
4
4
VGS
3
3
2
QGS
QDS
2
COSS
1
TJ = 25C ID = -3.5 A
0 2 4 6 8 10 12
1
0
0 14
QG, TOTAL GATE CHARGE (nC)
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge
1000 -IS, SOURCE CURRENT (A) VDD = -4.0 V ID = -1.0 A VGS = -4.5 V 100 t, TIME (ns) td(off) tr td(on) tf
6 5 4 3 2 1 0 VGS = 0 V TJ = 25C
10
1
1
10 RG, GATE RESISTANCE (W)
100
0.3
0.45
0.6
0.75
0.9
1.05
1.2
-VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
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-VDS, DRAIN-TO-SOURCE VOLTAGE (V)
NTR2101P
PACKAGE DIMENSIONS
SOT-23 (TO-236) CASE 318-08 ISSUE AN
D
3 SEE VIEW C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08.
E
1 2
HE c b q 0.25
e
A A1 L L1 VIEW C
DIM A A1 b c D E e L L1 HE
MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10
MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64
MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083
INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094
MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104
STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN
SOLDERING FOOTPRINT*
0.95 0.037
0.95 0.037
2.0 0.079 0.9 0.035
SCALE 10:1
0.8 0.031
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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NTR2101P/D

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